The vision of the Nanoionics and Electronics Lab is to translate the use of ions as a tool for exploring transport in new materials to an active device component that makes possible new electronic and photonic devices with functionalities that cannot be achieved using conventional materials.

Research interest include nanoionic 2D memory (NSF-ECCS/GOALI, NSF-DMR-EPM/CAREER, AAAS), electrostatic double layer (EDL) gating of 2D crystals for low-power electronics (LEAST center, SRC/DARPA), exploring the strain-induced semiconductor to metal transition in MoTe2 (NSF-DMR), ion-gating for hardware security (NSF-ECCS-EPMD), two-dimensional metals (NSF MRSEC), and polymer electrolytes for reconfigurable plasmonic and photonic elements (DARPA A2P).