The mission of our research group is to establish a fundamental understanding of ion-electron transport at the molecular level, and use this knowledge to design next-generation electronic devices at the limit of scaling for memory, logic, and energy storage. Current research interest include nanoionic graphene memory (NSF-ECCS/GOALI), electrostatic double layer (EDL) gating of 2D crystals for low-power electronics (LEAST center, SRC/DARPA), exploring the strain-induced semiconductor to metal transition in MoTe2 (NSF-DMR) and polymer electrolytes for reconfigurable plasmonic and photonic elements (DARPA A2P).